SiC Schotky Diodes

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Product Details:

Power Source External circuit
Usage Power conversion, switching power supply, motor drives, photovoltaic inverters, fast rectification
Features High voltage tolerance, low switching loss, high temperature stability, ruggedness
Thermal Conductivity Superior; SiC enables better heat dissipation than silicon
Operating Temperature -55C to +175C
Output Rectified DC
Input Current/Voltage as per diode configuration
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SiC Schotky Diodes Product Specifications

Output Rectified DC
Application Industrial electronics, renewable energy, automotive, power management
Operating Temperature -55C to +175C
Weight Approx. 0.8 g (varies by package)
Thermal Conductivity Superior; SiC enables better heat dissipation than silicon
Thickness 0.3 mm (die), varies by package
Supply Voltage Up to 1200 V
Response Time Fast; Reverse recovery time < 20 ns
Frequency Switching operation up to several hundred kHz
Size TO-220, TO-247, SMD packages available
Current Rating Up to 20 A
Capacity Rated for continuous current up to 20 A
Interface 2 terminal diode connection
Components Silicon Carbide semi-conductor diode
Product Type SiC Schottky Diode
Color Black body (standard semiconductor package)
Rated Voltage Up to 1200 V
Input Current/Voltage as per diode configuration
Features High voltage tolerance, low switching loss, high temperature stability, ruggedness
Function High-efficiency rectification, fast switching, low forward voltage drop
Usage Power conversion, switching power supply, motor drives, photovoltaic inverters, fast rectification
Dimension (L*W*H) Varies by package; typical TO-220: 10.0 x 4.5 x 15.0 mm
Power Source External circuit
Power Supply DC/AC circuit compatible

Package Types TO-220, TO-247, SMD (D2PAK, DFN)
Reverse Recovery Time Typically < 20 nanoseconds
Leakage Current Typically < 1 µA @ rated voltage
RoHS Compliance Yes, RoHS certified
Mounting Through-hole, surface mount
Forward Voltage Drop (Vf) Typically 1.4 V @ rated current
ESD Protection Standard for robust industrial environments
Material Silicon Carbide (SiC)
Maximum Junction Temperature 175°C
Peak Surge Current Up to 120 A (depending on model)
Isolation Voltage Up to 2500 V (package dependent)

Product Description

SiC Schottky Diodes offer ultra-fast switching, low forward voltage drop, and high thermal stability, making them ideal for high-efficiency power conversion. Built with Silicon Carbide technology, they outperform traditional silicon diodes in reducing switching losses and improving overall system efficiency. These diodes are perfect for applications such as electric vehicle charging systems, solar inverters, power factor correction circuits, and switch-mode power supplies. Their high-temperature capability and rugged reliability ensure stable performance in harsh environments. SiC Schottky Diodes enable compact, lightweight designs while supporting higher frequencies and voltages in next-generation industrial and renewable energy systems.

SiC Schottky Diodes

Features

Max. Operating temperature up to 175 deg C
Very fast switching speed and not sensitive to temperature
Higher operating frequency
Very low reverse recovery current and forward recovery voltage

Applications

Switching power supply
Inverter for solar energy
Motor drive
Power factor correcting
UPS

Electrical Characteristics

Type	Reverse Voltage	Forward current	Forward voltage		Package
Type	Reverse Voltage	Forward current	Vf (typ.) V	VF (max) V	Package
G2S06503A	650	3	1.41	1.8	TO-220
G2S06504A	650	4	1.5	1.8	TO-220
G2S06505A	650	5	1.4	1.8	TO-220
G2S06505C	650	5	1.4	1.8	TO-252
G2S06506A	650	6	1.44	1.8	TO-220
G2S06508A	650	8	1.47	1.8	TO-220
G2S06510A	650	10	1.5	1.8	TO-220
G2S06520A	650	20	1.7	1.8	TO-220
G2S06520B	650	20	1.7	1.8	TO-247 3L dual chips
G2S06530A	650	30	1.75	1.8	TO-220
G2S065100B	650	100	1.5	1.8	TO-247 3L dual chips
G2S12002A	1200	2	1.6	1.8	TO-220
G2S12002C	1200	2	1.6	1.8	TO-252
G2S12005A	1200	5	1.45	1.8	TO-220
G2S12005C	1200	5	1.45	1.8	TO-252
G2S12010A	1200	10	1.6	1.8	TO-220
G2S12010B	1200	10	1.45	1.8	TO-247 3L dual chips
G2S12020A	1200	20	1.6	1.8	TO-220
G2S12020B	1200	20	1.6	1.8	TO-247 3L dual chips
G2S12040B	1200	40	1.6	1.8	TO-247 3L dual chips
G2S17010A	1700	10	1.4	1.8	TO-220

Superior Efficiency and Speed

SiC Schottky Diodes are built for fast switching and low forward voltage drop, enabling reduced power loss and high performance in high-frequency applications. With a typical reverse recovery time under 20 nanoseconds, they excel in circuits requiring rapid transitions, such as switching power supplies and inverters.

Robust Thermal and Electrical Performance

These diodes withstand extreme conditions, offering a maximum junction temperature of 175C and supporting currents up to 20 A. Their silicon carbide construction delivers enhanced thermal conductivity and high surge current capabilities, ensuring dependable operation even in demanding industrial or automotive settings.

Versatile Packaging and Mounting

Whether you require through-hole or surface-mount configurations, SiC Schottky Diodes are available in TO-220, TO-247, D2PAK, and DFN packages. This flexibility suits diverse layout requirements for industrial, automotive, or renewable energy systems. All packages are RoHS certified and built with ESD protection for reliability.

FAQ's of SiC Schotky Diodes:

Q: How does the reverse recovery time of SiC Schottky diodes benefit my application?

A: With a reverse recovery time typically under 20 nanoseconds, SiC Schottky diodes enable efficient switching and reduce switching losses, making them ideal for high-frequency applications such as fast rectification in power converters, photovoltaic inverters, and switching power supplies.

Q: What are the main advantages of using Silicon Carbide (SiC) over traditional silicon diodes?

A: SiC diodes provide lower forward voltage drop, superior thermal conductivity, and higher voltage tolerance (up to 1200 V). They exhibit greater efficiency, handle higher temperatures (up to 175C), and show minimal leakage current, making them well-suited for rugged industrial and automotive environments.

Q: When should I choose a TO-220, TO-247, or SMD package for my design?

A: The choice of package depends on your circuit's power, space, and assembly requirements. TO-220 and TO-247 are suitable for through-hole, high-power applications requiring enhanced heat dissipation, while SMD packages like D2PAK and DFN are optimal for compact circuit designs and automated assembly processes.

Q: Where are SiC Schottky diodes commonly used?

A: These diodes are found in power conversion circuits, switching power supplies, motor drives, renewable energy systems (solar inverters), automotive electronics, and any application demanding fast, efficient rectification and high voltage operation.

Q: What is the maximum current and voltage rating I can expect from these diodes?

A: SiC Schottky Diodes support continuous current ratings up to 20 A and voltage ratings up to 1200 V, depending on the specific model and package selected. They also tolerate peak surge currents up to 120 A.

Q: How are these diodes mounted and connected in circuits?

A: Depending on the package type, these diodes can be mounted using through-hole techniques (TO-220, TO-247) or surface mount technology (D2PAK, DFN). They have standard two-terminal connections for easy integration into DC/AC circuits.

Q: What certifications and protections are offered with these diodes?

A: All SiC Schottky diodes are RoHS compliant and come with standard ESD protection, making them suitable for industrial environments and enhancing their durability and safety during handling and operation.

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