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SiC BJT-MOS in R and D

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Product Description

Silicon Carbide Bipolar Junction Transistor-Metal Oxide Semiconductor, or SiC BJT-MOS, devices are high-performance semiconductor components made for research and development purposes. With their exceptional efficiency, high voltage capabilities, and outstanding thermal stability, these devices combine the advantages of both BJT and MOSFET technologies, making them perfect for challenging situations. High-frequency applications, electric vehicles, power electronics, and renewable energy systems all frequently use SiC BJT-MOS devices. In research and development, they are essential for creating next-generation power converters, inverters, and motor control systems because of their capacity to withstand high switching rates and harsh temperatures.

Sic BJT/MOS in R&D

Goverment project: SiC BJT: 1200V/10A SiC MOS:1200V/40m0Q/40A 1200V/80mQ/20A

Material

High electron saturation speed (2x SD ,
High breakdown voltage ; (10x SD ,
Wide band gap (3x Si)
High thermal conductivity (3x SD
High melting point (2x SD

Devices

Low on resistance
High efficiency
High voltage resistant
High temperature resistant

Application

Enable high speed switching rate which highly improves application efficiency
Make equipment/ system size smaller it and lighter (such as reducing air cooling fins in PFC)
Work steadily under high voltage environment (server in power grid)
Work steadily under high temperature environment (EV/HEV)

		SiC diode of the company	SiC diode of a company	Si FRD	Reduction rate compared with Si FRD
1RM	A	18.1	16.9	94.8	80.91%
Trr	uS	0.048	0.047	0.53	90.94%
Qrr	nC	0.51	0.47	16.5	96.91%
Erec	mJ	0.44	0.44	8.17	94.63%
Eon	mJ	4.57	5.23	6.57	30.44%
Eoff	mJ	10.23	10.51	10.27	0.39%
Etotal	mJ	14.8	15.74	16.84	12.11%