SiC Modules in R and D

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Product Details:

Output High-efficiency SiC output
Thermal Conductivity High, with AlN ceramic substrate
Input Variable DC input
Components SiC MOSFETs, Diodes, Gate Driver
Features Low switching loss, High efficiency, Robust construction
Usage For R&D test and prototype setups
Power Source DC Power supply
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SiC Modules in R and D Product Specifications

Response Time Fast switching (<100ns)
Current Rating 30A
Power Supply DC
Application Laboratory, Prototype Development, High Power Switching
Operating Temperature -40C to +150C
Interface Screw terminal
Power Source DC Power supply
Features Low switching loss, High efficiency, Robust construction
Usage For R&D test and prototype setups
Thickness 12mm
IP Rating IP20
Function Power electronics and research applications
Frequency Up to 100kHz
Supply Voltage Up to 1200V
Weight Approx. 1.5 kg
Output High-efficiency SiC output
Dimension (L*W*H) 115mm x 75mm x 25mm
Color Black & Metal
Thermal Conductivity High, with AlN ceramic substrate
Input Variable DC input
Components SiC MOSFETs, Diodes, Gate Driver
Rated Voltage 1200V
Size Standard or customizable
Capacity 30A continuous
Product Type SiC MOSFET/Diode Modules

Compliance RoHS
Creepage Distance >10mm
Isolation Voltage 2500V
Mounting Method PCB or Chassis mount
Module Type Half-bridge, Full-bridge options
Lifecycle Status Prototype/Engineering Sample
ESD Protection Built-in
Lead Material Copper/Gold-plated
Gate Resistance Configurable
Storage Temperature -55°C to +150°C
Cooling Method Baseplate for heatsink attachment

Product Description

SiC Modules in R&D are advanced power solutions designed to accelerate innovation in high-efficiency energy systems. Utilizing Silicon Carbide technology, these modules deliver superior thermal performance, high voltage handling, and fast switching capabilities. Ideal for research in electric vehicles, renewable energy systems, aerospace, and industrial automation, SiC modules enable compact designs and reduced power losses. Their robust construction supports high-frequency operation and elevated temperatures, making them perfect for testing next-generation power electronics. In R&D environments, SiC modules help engineers explore improved energy conversion, system miniaturization, and reliability, pushing the boundaries of performance in cutting-edge applications.

SiC Modules in R&D

Hybrid module: 650V/200A 1200V/450A
Structure: half bridge
Frequency: 20kHz

Material

High electron saturation speed (2x SD ,
High breakdown voltage ; (10x SD ,
Wide band gap (3x Si)
High thermal conductivity (3x SD
High melting point (2x SD

Devices

Low on resistance
High efficiency
High voltage resistant
High temperature resistant

Application

Enable high speed switching rate which highly improves application efficiency
Make equipment/ system size smaller it and lighter (such as reducing air cooling fins in PFC)
Work steadily under high voltage environment (server in power grid)
Work steadily under high temperature environment (EV/HEV)

		SiC diode of the company	SiC diode of a company	Si FRD	Reduction rate compared with Si FRD
1RM	A	18.1	16.9	94.8	80.91%
Trr	uS	0.048	0.047	0.53	90.94%
Qrr	nC	0.51	0.47	16.5	96.91%
Erec	mJ	0.44	0.44	8.17	94.63%
Eon	mJ	4.57	5.23	6.57	30.44%
Eoff	mJ	10.23	10.51	10.27	0.39%
Etotal	mJ	14.8	15.74	16.84	12.11%

Versatile Bridge Configuration for Flexible Design

Choose between half-bridge and full-bridge module options to fit your laboratory power electronics setups. Both types facilitate high-efficiency switching with an output capacity of 30A continuous, making them ideal for prototype development and advanced switching circuits in R&D.

Advanced Thermal Management

These modules include a ceramic AlN substrate for superior thermal conductivity and a baseplate for effective heatsink mounting. This ensures stable operation in temperature ranges from -40C to +150C, essential for rigorous laboratory testing and high-power switching applications.

Built-in Safety and Compliance Features

Integrated ESD protection, an IP20 rating, and creepage distances over 10mm provide safety and reliability. RoHS compliance and robust metal housing further make these modules suitable for both local and global R&D research environments.

FAQ's of SiC Modules in R and D:

Q: How do I configure the gate resistance on these SiC modules?

A: The SiC modules feature a configurable gate resistance, allowing you to optimize switching performance for different SiC MOSFET and application requirements. You can select your preferred resistance value during the design phase or consult module documentation for supported ranges.

Q: What are the recommended mounting methods for these modules?

A: These SiC modules can be either PCB-mounted or attached to a chassis using the baseplate, which also supports heatsink integration for effective cooling during high-power laboratory testing or prototype setups.

Q: When should I use the half-bridge versus the full-bridge module type?

A: Half-bridge modules are ideal for single-phase, basic DC-DC converter or inverter topologies, while full-bridge modules are better suited for bi-directional or higher efficiency full-bridge converter designs, common in R&D and advanced switching applications.

Q: Where can these SiC modules be deployed?

A: These modules are intended for research laboratories, power electronics R&D environments, prototype development facilities, and academic setups where high-power switching and system evaluation are required.

Q: What is the process for integrating the modules into a test setup?

A: To integrate, connect the variable DC input and output terminals, ensure the baseplate is attached to a compatible heatsink for thermal management, and interface with your control circuitry via the screw terminals. Select configurable parameters such as gate resistance as needed.

Q: How does the built-in ESD protection benefit usage?

A: Built-in ESD protection protects sensitive SiC components from electrostatic discharge, reducing the risk of premature failure and ensuring greater reliability during handling and operation in research environments.

Q: What are the main benefits of using these SiC modules in R&D applications?

A: These modules offer fast switching (<100ns), high efficiency, low switching losses, and robust construction. Their flexibility and compliance features make them an excellent choice for iterative R&D testing, rapid prototyping, and high-power switching applications.

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