SiC Schotky Barrier Diodes

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Operating Temperature -55C to +175C
Thermal Conductivity High; SiC material (~3-4 W/cmK)
Components SiC Schottky junction, encapsulated plastic case, metallic leads
Power Source External DC/AC circuit
Power Supply DC Input/Output
Output Rectified DC
Input DC/AC
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SiC Schotky Barrier Diodes Product Specifications

Power Supply DC Input/Output
Rated Voltage 600 V, 650 V, 1200 V (dependent on model)
Function Current rectification, fast switching in power electronics
Thickness 0.3 mm - 0.6 mm (chip); package dependent
Application Industrial power supply, motor drives, power inverters, telecommunications, automotive ECU
Interface Through-hole or SMD
Response Time Ultrafast reverse recovery (< 20 ns)
Features Low leakage current, high surge capability, RoHS compliant, robust against high temperatures
Usage Power conversion, power factor correction (PFC), inverters, SMPS, solar inverters
Supply Voltage Up to 1200 VDC
Output Rectified DC
Weight ~1.2 g (SMD package); ~2 g (TO-220 package)
Input DC/AC
Operating Temperature -55C to +175C
Frequency High-frequency switching up to 500 kHz
Thermal Conductivity High; SiC material (~3-4 W/cmK)
Product Type SiC Schottky Barrier Diode
Current Rating 4 A to 20 A (model dependent)
Color Black body, silver leads
Capacity 10 A, 15 A, 20 A (depends on model)
Size Package sizes include TO-220, TO-247, DPAK, etc.
Dimension (L*W*H) Depends on package; e.g., TO-220: 10.24.515.6 mm
Components SiC Schottky junction, encapsulated plastic case, metallic leads
Power Source External DC/AC circuit

Isolation Voltage 2500Vrms (package-dependent)
Polarity Unidirectional
Static/Leakage Current Low, typical <1A @ rated voltage
Typical Circuit Application PFC, boost converter, flyback converter, half-bridge/full-bridge rectifiers
Reverse Recovery Time Nearly zero (instantaneous)
Mounting Style Through-hole or Surface Mount
Maximum Junction Temperature 175C
ESD Sensitivity Class 1C
Surge Current Capability Up to 800A (model-dependent)
Compliance RoHS and REACH compliant
Creepage Distance 6mm - 12mm
Material Silicon Carbide (SiC)
Forward Voltage Drop Typically 1.3V at rated current
Storage Temperature Range -55C to +175C
Package Type TO-220AB, TO-247, D2PAK, SMD

Product Description

SiC Schottky Barrier Diodes (SBDs) are high-performance, ultra-fast diodes designed for efficient power conversion in demanding applications. Leveraging Silicon Carbide technology, they offer low reverse recovery time, minimal switching losses, and excellent thermal conductivity. These features make them ideal for electric vehicle powertrains, solar inverters, server power supplies, and industrial motor drives. With high voltage tolerance and robust reliability, SiC SBDs enable compact, energy-efficient designs capable of operating in high-temperature environments. Their ability to reduce power loss and increase system efficiency positions them as a key component in next-generation high-frequency, high-power electronic systems.

Sic Schottky Barrier Diodes

650V: 3A/4A/5A/6A/8A/1 0A/20A/ 30A/50A/80A/100A 1200V:2A/5A/10A/20A/40A/50A 1700V:10A/30A

Material

High electron saturation speed (2x SD ,
High breakdown voltage ; (10x SD ,
Wide band gap (3x Si)
High thermal conductivity (3x SD
High melting point (2x SD

Devices

Low on resistance
High efficiency
High voltage resistant
High temperature resistant

Application

Enable high speed switching rate which highly improves application efficiency
Make equipment/ system size smaller it and lighter (such as reducing air cooling fins in PFC)
Work steadily under high voltage environment (server in power grid)
Work steadily under high temperature environment (EV/HEV)

		SiC diode of the company	SiC diode of a company	Si FRD	Reduction rate compared with Si FRD
1RM	A	18.1	16.9	94.8	80.91%
Trr	uS	0.048	0.047	0.53	90.94%
Qrr	nC	0.51	0.47	16.5	96.91%
Erec	mJ	0.44	0.44	8.17	94.63%
Eon	mJ	4.57	5.23	6.57	30.44%
Eoff	mJ	10.23	10.51	10.27	0.39%
Etotal	mJ	14.8	15.74	16.84	12.11%

High-Frequency & Efficient Switching

Utilizing Silicon Carbide (SiC) technology, these Schottky Barrier Diodes provide reliable operation at high frequencies up to 500 kHz with minimal reverse recovery time. This makes them exceptionally suitable for applications demanding fast switching, such as power factor correction (PFC), inverters, and SMPS.

Robust & Versatile Construction

Available in multiple package types such as TO-220AB, TO-247, and various SMD formats, these diodes support both through-hole and surface mounting. They feature enhanced isolation (up to 2500Vrms) and substantial creepage distance for safe incorporation into high-voltage environments.

Excellent Thermal Stability and Compliance

Designed to withstand harsh thermal conditions, these devices maintain performance across a wide operating temperature (-55C to +175C) and are RoHS and REACH compliant. Their high thermal conductivity ensures stable and efficient dissipation of heat during demanding power applications.

FAQs of SiC Schotky Barrier Diodes:

Q: How does the SiC Schottky Barrier Diode benefit high-frequency power applications?

A: The SiC Schottky Barrier Diode excels in high-frequency switching (up to 500 kHz) due to its ultrafast reverse recovery time (<20ns) and low forward voltage drop (typically 1.3V). This minimizes energy loss and improves efficiency in power conversion applications, including PFC, inverters, and flyback converters.

Q: What is the recommended operating temperature range for SiC Schottky Barrier Diodes?

A: These diodes are designed to operate reliably from -55C to +175C, making them suitable for both industrial and automotive environments where robust thermal performance is essential.

Q: When should I choose a model with higher surge current capability?

A: A model with higher surge current capability, up to 800A (model-dependent), should be chosen for applications involving occasional high inrush currents, such as power factor correction circuits and motor drives, to ensure the diodes longevity and safe operation.

Q: What mounting options and package formats are available for these diodes?

A: SiC Schottky Barrier Diodes are offered in both through-hole (TO-220AB, TO-247) and surface mount packages (D2PAK, SMD), allowing for versatile integration into a range of board layouts and assembly processes.

Q: Where are SiC Schottky Barrier Diodes commonly used?

A: These diodes are widely used in power electronics, including industrial power supplies, motor drives, telecommunications equipment, solar inverters, and automotive ECUs, due to their fast response and robust design.

Q: How does the low leakage current of these devices improve system reliability?

A: Low static/leakage current (typically <1A at rated voltage) reduces heat generation and energy waste during off-state conditions, enhancing the overall reliability and efficiency of the electronic system.

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