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Injection Enhanced Gate Transistor (IEGT)

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Product Description

The Injection Enhanced Gate Transistor (IEGT) is a high-power semiconductor device that combines the advantages of IGBT and thyristor technologies for superior performance in large-scale energy systems. Designed for high-voltage, high-current applications, IEGTs offer low conduction losses, fast switching, and excellent controllability. Ideal for use in power transmission systems, industrial motor drives, railway traction, and high-voltage DC (HVDC) converters, IEGTs ensure efficient and reliable energy flow. Their rugged construction and enhanced injection mechanism provide greater efficiency and thermal stability, making them a critical component in demanding applications that require precise control and robust power handling capabilities.